Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures

With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a selfconsistent mean-field description. From the simulated Coulomb-blockade characteristics we derive effective system capacitances and demonstrate how quantum confinement effects give rise to corrections. Such deviations are crucial for the interpretation of experimentally determined capacitances and the extraction of application-relevant system parameters

Direct and Heterodyne Detection of Microwaves in a Metallic Single Wall Carbon Nanotube

This letter reports measurements of microwave (up to 4.5 GHz) detection in metallic single-walled carbon nanotubes. The measured voltage responsivity was found to be 114 V/W at 77K. We also demonstrated heterodyne detection at 1 GHz. The detection mechanism can be explained based on standard microwave detector theory and the nonlinearity of the DC IV-curve. We discuss the possible causes of this nonlinearity. While the frequency response is limited by circuit parasitics in this measurement, we discuss evidence that indicates that the effect is much faster and that applications of carbon nanotubes as terahertz detectors are feasible

9286 Stars: An Agglomeration of Stellar Polarization Catalogs

This is a revision. The revisions are minor. The new version of the catalog should be used in preference to the old. The most serious error in the older version was that $\theta_diff$ was incorrect, being sometimes far too large, for Reiz and Franco entries; the correct values are all zero for that reference. We present an agglomeration of stellar polarization catalogs with results for 9286 stars. We have endeavored to eliminate errors, provide accurate (arcsecond) positions, sensibly weight multiple observations of the same star, and provide reasonable distances. This catalog is included as an ASCII file (catalog.txt) in the source of this submission.Comment: The most serious error in the older version was that $\theta_diff$ was incorrect, being sometimes far too large, for Reiz and Franco entries; the correct values are all zero for that reference. 11 pages, no figures. Accepted for Astronomical Journal. Catalog also available as an ASCII file by anonymous FTP from ftp://vermi.berkeley.edu/pub/polcat/p14.ou

A Fully Tunable Single-Walled Carbon Nanotube Diode

We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube (SWNT). The diode's turn-on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is ~6 times the nanotube bandgap energy. Furthermore, the same device design can be configured into a backward diode by tuning the band-to-band tunneling current with gate voltages. A nanotube backward diode is demonstrated for the first time with nonlinearity exceeding the ideal diode. These results suggest that a tunable nanotube diode can be a unique building block for developing next generation programmable nanoelectronic logic and integrated circuits.Comment: 14 pages, 4 figure

On the Performance of Single-Gated Ultrathin-Body SOI Schottky-Barrier MOSFETs

The authors study the dependence of the performance of silicon-on-insulator (SOI) Schottky-barrier (SB) MOSFETs on the SOI body thickness and show a performance improvement for decreasing SOI thickness. The inverse subthreshold slopes S extracted from the experiments are compared with simulations and an analytical approximation. Excellent agreement between experiment, simulation, and analytical approximation is found, which shows that S scales approximately as the square root of the gate oxide and the SOI thickness. In addition, the authors study the impact of the SOI thickness on the variation of the threshold voltage V-th of SOI SB-MOSFETs and find a non-monotonic behavior of V-th. The results show that to avoid large threshold voltage variations and achieve high-performance devices, the gate oxide thickness should be as small as possible, and the SOI thickness should be similar to 3 nm

Lateral scaling in carbon nanotube field-effect transistors

We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and drain. We ascribe this difference to a change from Schottky barrier modulation at the contacts to bulk switching. We also find that the current through the bulk portion is independent of gate length for any gate voltage, offering direct evidence for ballistic transport in semiconducting CNs over at least a few hundred nanometers, even for relatively small carrier velocities.Comment: 4 pages, 4 figure